Effect of anneal temperature on electrical and optical properties of SnS:Ag thin films
نویسندگان
چکیده
SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation technique successively, and then the films were annealed at different temperatures (0-300°C) in N2 atmosphere for 2h in order to obtain silver-doped SnS ( SnS:Ag ) films. The phases of SnS:Ag films were analyzed by X-ray diffraction (XRD) system, which indicated that the films were polycrystalline SnS with orthogonal structure, and the crystallites in the films were exclusively oriented along the(111)direction. With the increase of the annealing temperature, the carrier concentration and mobility of the films first rose and then dropped, whereas their resistivity and direct band gap Eg showed the contrary trend. At the annealing temperature of 260°C, the SnS:Ag films had the best properties: the direct bandgap was 1.3 eV, the carrier concentration was up to 1.132 × 10 cm, and the resistivity was about 3.1 Ωcm.
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